DocumentCode :
1889380
Title :
Microwave immitance logical elements
Author :
Lishchynskaya, L.B. ; Filyniuk, M.A. ; Chekhmestrouk, R.Y. ; Rozhkova, Y.S.
Author_Institution :
Inst. for Radio Eng., Telecommun. & Electron. Instrum. Eng., VNTU, Vinnitsa, Ukraine
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
137
Lastpage :
138
Abstract :
Theoretical substantiation of the basic parameters of immitance logical elements such as speed, the coefficient of association for the input, the coefficient of stability, power consumption is carried out. The analytical expressions for these parameters, which are used for the implementation of LE on the bipolar and field-polar transistor structures are obtained.
Keywords :
bipolar transistors; logic circuits; bipolar transistor; field-polar transistor structure; microwave immitance logical element; power consumption; stability coefficient; Circuit stability; Electronic mail; Logic gates; Microwave circuits; Microwave transistors; Noise; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6335918
Link To Document :
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