DocumentCode
1889476
Title
Nonlinear EE_HEMT model of GaN transistor
Author
Krutov, A.V. ; Rebrov, A.S.
Author_Institution
FSUE RPC Istok, Fryazino, Russia
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
143
Lastpage
144
Abstract
The present paper concerns the results of creating a nonlinear EE_HEMT model of TGF2023-01 transistor. The results of large signal matching simulation, comparison modeling results and Triquint data are presented.
Keywords
gallium compounds; high electron mobility transistors; GaN; GaN transistor; TGF2023-01 transistor; Triquint data; nonlinear EE_HEMT model; signal matching simulation; Data models; Electronic mail; Gain; Gallium arsenide; Gallium nitride; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6335921
Link To Document