DocumentCode
1889499
Title
Impedance spectroscopy of semiconductor heterojunctions
Author
Brus, V.V.
Author_Institution
Frantsevich Inst. for Problems of Mater. Sci., Chernivtsi, Ukraine
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
145
Lastpage
146
Abstract
The quantitative analysis of the impedance of nonideal heterojunctions was carried out taking into consideration the effects of series resistance, shunt resistance, parasitic inductance and electrically active interface traps. A new approach is proposed to determine the energy distribution of surface state density and to calculate the actual value of barrier capacitance of heterojunctions on the basis of the analysis of their complex impedance-voltage characteristics.
Keywords
interface states; semiconductor heterojunctions; spectroscopy; surface states; barrier capacitance; complex impedance-voltage characteristics; electrically active interface traps; energy distribution; impedance spectroscopy; nonideal heterojunctions; parasitic inductance; semiconductor heterojunctions; series resistance effect; shunt resistance; surface state density; Capacitance; Equivalent circuits; Heterojunctions; Impedance; Impedance measurement; Resistance; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6335922
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