DocumentCode :
1889530
Title :
Real-space transfer and peculiarities of electric field domain localization in HEMT´s
Author :
Kapralova, A.A. ; Lukashin, V.M. ; Pashkovskii, A.B.
Author_Institution :
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
153
Lastpage :
154
Abstract :
The results of physical mechanisms investigations responsible for hard electric field domain and heat generation sources localization near the drain´s gate edge in HEMT´s are presented. It is shown that the hard localization effect typical only for HEMT´s, not typical for FET´s, as a result of realspace transfer.
Keywords :
electric fields; high electron mobility transistors; HEMT; electric field domain localization; heat generation sources localization; real-space transfer; Electric fields; Electronic mail; Equations; Gallium arsenide; HEMTs; Heating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6335924
Link To Document :
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