Title :
Model of ohmic contact in mesfet with large particle calculation method
Author :
Asanov, E.E. ; Kilessa, G.V. ; Zuev, S.A. ; Slipchenko, N.I.
Author_Institution :
Tavrida Nat. V. I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The paper presents the main points on which a new implementation of the numerical model of an ohmic metal-semiconductor contact was built. As a result of computational experiments the current-voltage characteristics of contact and fields distribution were obtained, indicating the reliability of the model.
Keywords :
Schottky gate field effect transistors; numerical analysis; ohmic contacts; semiconductor device reliability; contact distribution; current-voltage characteristics; field distribution; large particle calculation method; numerical model; ohmic metal-semiconductor contact model; reliability; Computational modeling; Educational institutions; Electric potential; Electronic mail; Numerical models; Ohmic contacts; Semiconductor device modeling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
