Title :
Simulation of operation of Gunn diodes with short active layer
Author :
Samoylov, V.I. ; Torkhov, N.A. ; Bozhkov, V.G. ; Lukash, V.S. ; Kozlova, A.V.
Author_Institution :
Fed. Res. Inst. of Semicond. Devices (FRISD), Tomsk, Russia
Abstract :
Gunn diode operation based on two-temperature model was investigated in (10...50) GHz frequency band. It is shown that with a (1.0...1.8) μm active layer´s length and with the positive linear gradient of electron density distribution in the diode´s base, Gunn diodes can operate with efficiency of 6% at the first harmonic.
Keywords :
Gunn diodes; electron density; Gunn diodes; efficiency 6 percent; electron density distribution; frequency 10 GHz to 50 GHz; short active layer; size 1 mum to 1.8 mum; two-temperature model; Charge carriers; Doping profiles; Electric fields; Electronic mail; Gallium arsenide; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
