DocumentCode :
1889600
Title :
Nitride galium Gunn diode of millimeter range
Author :
Goncharuk, N.M. ; Karushkin, N.F.
Author_Institution :
Research Institute "Orion”, Kiev, 03680, Ukraine
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
161
Lastpage :
162
Abstract :
Static and microwave characteristics of millimeter range GaN diode with 2-μm active layer length and doping level of 1017 cm−3 are investigated in two-temperature approaching. Frequency dependences of microwave efficiency are calculated at different bias voltage for the diode in a single resonant electric circuit. Maximal efficiency is of 1.5 % at frequencies near 100 GHz.
Keywords :
IEEE Xplore; Portable document format;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6335928
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1889600
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