• DocumentCode
    1889600
  • Title

    Nitride galium Gunn diode of millimeter range

  • Author

    Goncharuk, N.M. ; Karushkin, N.F.

  • Author_Institution
    Research Institute "Orion”, Kiev, 03680, Ukraine
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    161
  • Lastpage
    162
  • Abstract
    Static and microwave characteristics of millimeter range GaN diode with 2-μm active layer length and doping level of 1017 cm−3 are investigated in two-temperature approaching. Frequency dependences of microwave efficiency are calculated at different bias voltage for the diode in a single resonant electric circuit. Maximal efficiency is of 1.5 % at frequencies near 100 GHz.
  • Keywords
    IEEE Xplore; Portable document format;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1889600