DocumentCode :
1889673
Title :
Resonance frequency of Gunn diodes based on А3В5 graded-gap semiconductors
Author :
Zhivotova, E.N. ; Storozhenko, I.P.
Author_Institution :
Nat. Pharm. Univ., Kharkov, Ukraine
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
165
Lastpage :
166
Abstract :
Dependence of resonance frequency of current oscillations generated by Gunn diodes (TED) on the basis of graded gap semiconductors on length of the graded gap layer (lV), active region length (la) and the voltage (U) applied to the diode is determined. The studies have been carried out using three-level model of intervalley electron transfer (IET) in the graded gap semiconductor.
Keywords :
Gunn diodes; semiconductor device models; A3B5 graded-gap semiconductors; Gunn diodes; IET; TED; active region length; graded gap layer; intervalley electron transfer; resonance frequency; three-level model; Electronic mail; Gallium arsenide; Gallium nitride; Resonant frequency; Semiconductor diodes; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6335930
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1889673
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