Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping

The electron lifetime has been studied by a pump-probe optical transmission technique in heavily Be-doped InGaAs lattice-matched to InP as a function of the growth temperature (350≤T_g≤500°C) and doping (2×10¹⁹≤[Be]≤2.6×10²⁰ cm^-3). Reduction of the growth temperature to 350-400°C induces the creation of electron recombining centers, efficient at the lowest doping studied here. But, for higher dopings, these defects have negligible effects compared to intrinsic Auger processes: the high diffusion of Be can thus be limited by growing heterostructures at reduced temperatures without compromising the electron lifetime. Sub-picosecond electron lifetimes have been measured at the highest doping.