• DocumentCode
    1889694
  • Title

    Silicon lateral avalanche photodiodes fabricated by standard 0.18 µm CMOS process

  • Author

    Iiyama, Koichi ; Takamatsu, Hideki ; Maruyama, Takeo

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Kanazawa Univ., Kanazawa, Japan
  • fYear
    2009
  • fDate
    20-24 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A Si APD was fabricated by standard 0.18 mum CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; silicon; APD; Si; avalanche gain; avalanche photodiodes; bandwidth 1.6 GHz; bandwidth 800 MHz; size 0.18 mum; standard CMOS process; voltage 8 V; Avalanche photodiodes; CMOS process; Decision support systems; Quadratic programming; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2009. ECOC '09. 35th European Conference on
  • Conference_Location
    Vienna
  • Print_ISBN
    978-1-4244-5096-1
  • Type

    conf

  • Filename
    5287343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1889694