Another perspective on the temperature dependence of microelectronic-device reliability

The Arrhenius model is used in MIL-HDBK-217 to relate microelectronic device temperature to device failure rate without separately considering the relevant failure mechanisms. This application of the model is inconsistent with physics-of-failure (POF) principles as well as acceleration modeling theory. Current POF research indicates that the relationship between temperature and failure rate is more complex than previously realized, necessitating explicit design consideration of temperature change, rate of change, and spatial temperature gradients. A review of acceleration modeling theory indicates that when the effect of temperature on microelectronic device reliability is modeled, each failure mechanism should be treated separately