Title :
Oscillation efficiency and frequency properties of intervalley-electron transfer GaN diodes
Author :
Botsula, O.V. ; Prokhorov, E.D. ; Zaichenko, S.V. ; Pavlenko, L.I. ; Motorniuk, S.A.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The results obtained from simulating GaN-based intervalley-electron transfer diodes having different types of cathode contacts (ohmic, metallic, with a lower-concentration region). The main-particle Monte Carlo method was used to analyze electron processes occurring in a diode. The diode parameters and an operating frequency were selected from the condition for obtaining a maximum oscillation frequency. The maximum oscillation frequency for all type of considered diodes is shown to be as high as 600 GHz.
Keywords :
III-V semiconductors; Monte Carlo methods; cathodes; gallium compounds; ohmic contacts; submillimetre wave diodes; wide band gap semiconductors; GaN; cathode contacts; electron process analysis; frequency properties; intervalley-electron transfer diodes; lower-concentration region; main-particle Monte Carlo method; maximum oscillation frequency; metallic contacts; ohmic contacts; Electric fields; Electronic mail; Gallium nitride; Monte Carlo methods; Oscillators; Resonant frequency; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
