Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs

Author

Semtsiv, M.P. ; Tarasov, G.G. ; Kissel, H. ; Eickemeyer, F. ; Masselink, W.T.

Author_Institution

Dept. of Phys., Humboldt-Univ., Berlin, Germany

fYear

2002

fDate

2002

Firstpage

529

Lastpage

532

Abstract

Strain-compensated In_0.32Ga_0.68As-In_0.32Ga_0.68P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 μm. The conduction band offset between the strained In_0.32Ga_0.68As and In_0.32Ga_0.68P appears to lie between 400 and 500 meV.

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; infrared spectra; internal stresses; semiconductor superlattices; visible spectra; 1e-2e transitions; 218 meV; 5.7 micron; GaAs; In_0.32Ga_0.68As-In_0.32Ga_0.68P; conduction band offset; electronic subband energy levels; gas-source molecular-beam epitaxy; interband optical absorption; intersubband optical absorption; mid-infrared optical transmission; strain-compensated InGaAs-InGaP superlattices; superlattice structure; visible transmission; Absorption; Area measurement; Gallium arsenide; Molecular beam epitaxial growth; Optical polarization; Optical superlattices; Photoluminescence; Photonic band gap; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014483

Filename

1014483