Control of growth mode and wire width in selective molecular beam epitaxy growth of InGaAs quantum wire arrays on InP [001] substrates

Control of the growth mode and the wire width were attempted for selective MBE growth of InGaAs quantum wire (QWR) arrays on patterned [001] InP substrates. InGaAs ridge structure arrays were grown first, and then InAlAs/InGaAs/InAlAs layers were supplied to grow QWR arrays by self-organization. By combining a Ga-stabilized flat-top growth mode and an As stabilized sharp-top growth mode under low V/III ratios for InGaAs ridge structure growth, initial pattern non-uniformity was removed, achieving ridge roughness below a monoatomic step level. Highly uniform and narrow arrow-headed InGaAs QWR arrays were formed under a tight wire width control, showing strong PL emission with a narrow FWHM of 19 meV.