Title :
InAs self-assembled quantum dot lasers grown on [100] InP
Author :
Poole, P.J. ; Allen, C.Ni. ; Marshall, P. ; Fraser, J. ; Moisa, S. ; Raymond, S. ; Fafard, S.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 × 1010 cm-2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm × 150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; indium compounds; quantum well lasers; self-assembly; semiconductor growth; semiconductor quantum dots; thermionic emission; 1.6 micron; 150 micron; 2000 micron; 77 K; InAs self-assembled quantum dot lasers; InAs-InGaAsP; InP; LD cavity length; [100] InP substrates; chemical beam epitaxy; laser diode; quaternary InGaAsP; stacked layers; thermionic emission; threshold current density; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Threshold current; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014493
