DocumentCode :
1890140
Title :
Suppression of flicker noise upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz band
Author :
Levantino, Salvatore ; Zanuso, M. ; Samori, Carlo ; Lacaita, Andrea
Author_Institution :
Politec. di Milano, Milan, Italy
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
50
Lastpage :
51
Abstract :
This work proposes a method to suppress upconversion of flicker noise of switching FETs in LC VCOs over a wide tuning range, without compromising startup and 1/f noise and with no trimming. A demonstrator fabricated in 65 nm CMOS draws 0.6 mA from a 1.2 V supply and exhibits phase noise below -44 dBc/Hz at 1 kHz and -114 dBc/Hz at 1 MHz over the 3.0-to-3.6 GHz tuning range.
Keywords :
CMOS integrated circuits; field effect MMIC; field effect transistors; flicker noise; microwave oscillators; voltage-controlled oscillators; CMOS VCO; LC VCO; bandwidth 1 MHz; bandwidth 1 kHz; current 0.6 mA; flicker noise upconversion; frequency 3 GHz to 3.6 GHz; size 65 nm; switching FETs; voltage 1.2 V; 1f noise; Circuit noise; Circuit testing; FETs; Frequency; Noise reduction; Phase noise; Resonance; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5434054
Filename :
5434054
Link To Document :
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