Title :
Atomic structures on in-terminated INAS[001]-C(4X4) and INAS[001]-(4X2)C(8X2) surfaces studied by arpes
Author :
De Padova, P. ; Perfetti, P. ; Quaresima, C. ; Richter, C. ; Zerrouki, M. ; Hricovini, K.
Author_Institution :
CNR-ISM, Rome, Italy
Abstract :
Highly ordered array of quantum stripes are obtained on In-terminated InAs(001) reconstructed surface. We report the investigation of clean In-terminated InAs(OO1)(4x2)-c(8x2), and InAs(001)-(4x4) surfaces by low electron energy diffraction (LEED) and by high-resolution angle-resolved photoemission spectroscopy (ARPES). Monitoring the InAs(001) surface by LEED as a function of the substrate temperature, the -(4x4) and the -4x2(8x2) reconstructions were observed. ARPES measurements on both reconstructions show electronic states belonging to the In-stripes, which appear on the surface after the annealing treatment. These states are non-dispersive as a function of photon energy and in the case of 4x2-c(8x2) reconstruction the k-dispersion exists only along the [011] stripes direction, at variance on c(4x4s) surface the states have a fix energy.
Keywords :
III-V semiconductors; annealing; indium compounds; low energy electron diffraction; surface reconstruction; surface states; ultraviolet photoelectron spectra; ARPES; In-stripes; InAs; annealing treatment; atomic structure; electronic states; high-resolution angle-resolved photoemission spectroscopy; highly ordered quantum stripe array; k-dispersion; low electron energy diffraction; nondispersive states; photon energy; substrate temperature; Annealing; Electrons; Energy measurement; Image reconstruction; Photoelectricity; Spectroscopy; Surface cleaning; Surface reconstruction; Surface treatment; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm, Sweden
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014499
