DocumentCode
1890400
Title
Photoemission study of highly luminescent InP nanocrystals
Author
Adam, S. ; McGinley, C. ; Moller, Torsten
Author_Institution
HASYLAB, DESY, Hamburg, Germany
fYear
2002
fDate
2002
Firstpage
601
Lastpage
604
Abstract
Two kinds of strongly luminescent materials based on monodisperse colloidal InP nanocrystals were investigated by photoelectron spectroscopy with the use of synchrotron radiation. One method to achieve high photoluminescence quantum yields is the epitaxial overgrowth of a shell of a wider band gap semiconductor on the surface of the InP nanocrystals. We have studied InP nanocrystals covered with ZnS. The XPS results confirmed the core-shell structure of the composite nanocrystals and allowed us to extract the average layer thickness of the ZnS shell. Another approach to prepare highly luminescent nanoparticles is etching the nanocrystal surface with certain fluorine compounds. We have investigated InP nanocrystals treated with hydrogen fluoride. High resolution In 3d and P 2p core level spectra of etched and non-etched particles reveal changes at the nanocrystal surface. A simple model for the etching process is discussed.
Keywords
II-VI semiconductors; III-V semiconductors; X-ray photoelectron spectra; colloidal crystals; core levels; etching; indium compounds; nanoparticles; photoluminescence; wide band gap semiconductors; zinc compounds; HF treatment; In 3d core level spectra; InP; InP nanocrystal surface; InP-ZnS; P 2p core level spectra; XPS; average layer thickness; composite nanocrystals; core-shell structure; epitaxial overgrowth; high photoluminescence quantum yields; high resolution core level spectra; highly luminescent InP nanocrystals; highly luminescent nanoparticles; monodisperse colloidal InP nanocrystals; nanocrystal surface etching; photoelectron spectroscopy; synchrotron radiation; wide band gap semiconductor shell; Etching; Indium phosphide; Nanocrystals; Photoelectricity; Photoluminescence; Semiconductor materials; Spectroscopy; Surface treatment; Synchrotron radiation; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014500
Filename
1014500
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