• DocumentCode
    1890400
  • Title

    Photoemission study of highly luminescent InP nanocrystals

  • Author

    Adam, S. ; McGinley, C. ; Moller, Torsten

  • Author_Institution
    HASYLAB, DESY, Hamburg, Germany
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    601
  • Lastpage
    604
  • Abstract
    Two kinds of strongly luminescent materials based on monodisperse colloidal InP nanocrystals were investigated by photoelectron spectroscopy with the use of synchrotron radiation. One method to achieve high photoluminescence quantum yields is the epitaxial overgrowth of a shell of a wider band gap semiconductor on the surface of the InP nanocrystals. We have studied InP nanocrystals covered with ZnS. The XPS results confirmed the core-shell structure of the composite nanocrystals and allowed us to extract the average layer thickness of the ZnS shell. Another approach to prepare highly luminescent nanoparticles is etching the nanocrystal surface with certain fluorine compounds. We have investigated InP nanocrystals treated with hydrogen fluoride. High resolution In 3d and P 2p core level spectra of etched and non-etched particles reveal changes at the nanocrystal surface. A simple model for the etching process is discussed.
  • Keywords
    II-VI semiconductors; III-V semiconductors; X-ray photoelectron spectra; colloidal crystals; core levels; etching; indium compounds; nanoparticles; photoluminescence; wide band gap semiconductors; zinc compounds; HF treatment; In 3d core level spectra; InP; InP nanocrystal surface; InP-ZnS; P 2p core level spectra; XPS; average layer thickness; composite nanocrystals; core-shell structure; epitaxial overgrowth; high photoluminescence quantum yields; high resolution core level spectra; highly luminescent InP nanocrystals; highly luminescent nanoparticles; monodisperse colloidal InP nanocrystals; nanocrystal surface etching; photoelectron spectroscopy; synchrotron radiation; wide band gap semiconductor shell; Etching; Indium phosphide; Nanocrystals; Photoelectricity; Photoluminescence; Semiconductor materials; Spectroscopy; Surface treatment; Synchrotron radiation; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014500
  • Filename
    1014500