InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

We report results on InP/GaAsSb and (Ga,Al)InAs/GaAsSb DHBT large area devices grown by MBE in a production environment and on a 4 inch multiwafer machine. All sources are solid including that of phosphorus and antimony, except the carbon gaseous source which is CBr₄. Preliminary DC characteristics obtained with a base thickness of 50 nm doped at 3.5×10¹⁹ atom.cm^-3 giving a base resistance of 800 Ω/sq, shows a current gain 134 measured at 1 kA/cm², which is to our knowledge the record to date in this system. It is also shown that the p-type doping concentration of the GaAsSb base can easily be reached at the level as high as 2×10²⁰ atom.cm^-3 while mobility remains at 27 cm² v^-1 sec^-1. These results show that the antimony-based compounds can easily be transferred into production.