High performance of short-channel MOSFETs due to an elevated central-channel doping

Author

Tanaka, M. ; Tokida, N. ; Okagaki, T. ; Miura-Mattausch, M. ; Hansch, W. ; Mattausch, H.J.

Author_Institution

Dept. of Electr. Eng., Hiroshima Univ., Japan

fYear

2000

fDate

9-9 June 2000

Firstpage

365

Lastpage

370

Abstract

An elevated central-channel doping with a depth similar to the S/D junctions is proposed as the best measure for simultaneously improving MOSFET device and high speed circuit performances as well as minimizing their fluctuations. We base our arguments on hydrodynamic device simulation, measured device data of vertical MOSFETs with a central delta-doped impurity profile and include experimental results on doping-profile fluctuations along the channel, which have not been available previously.

Keywords

MOSFET; doping profiles; fluctuations; semiconductor device models; delta-doped impurity profile; doping-profile fluctuations; elevated central-channel doping; high performance devices; high speed circuit performance; hydrodynamic device simulation; short-channel MOSFETs; Circuit simulation; Doping profiles; Fluctuations; Hydrodynamics; Impurities; MOSFETs; Molecular beam epitaxial growth; Performance evaluation; Threshold voltage; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 2000. Proceedings of the ASP-DAC 2000. Asia and South Pacific

Conference_Location

Yokohama, Japan

Print_ISBN

0-7803-5973-9

Type

conf

DOI

10.1109/ASPDAC.2000.835125

Filename

835125