DocumentCode :
1890929
Title :
Electroless deposition of bumps for TAB technology
Author :
Simon, J. ; Zakel, E. ; Reichl, H.
Author_Institution :
Tech. Univ., Berlin, Germany
fYear :
1990
fDate :
20-23 May 1990
Firstpage :
412
Abstract :
Electroless nickel plating was investigated for bumping. Electroless nickel bumps with a height of 265 μm have been selectively formed on aluminium bondpads. The nickel bumps have been inner-lead-bonded by gang bonding to a tape with a thick layer of tin. The adhesion of the bumps was investigated as a function of the pretreatment of the bondpads. It is noted that electroless bumping offers the greatest advantage of reducing the costs of the bumping process because no sputtering equipment or lithography is required. This can be very important if only small quantities of bumped dies are required because the process is independent of substrate size. Electroless bumping may become an alternative to conventional wafer bumping by electrodeposition at least for certain applications
Keywords :
VLSI; electroless deposition; nickel; tape automated bonding; 265 micron; Al pads; Ni-Al bumps; TAB technology; electroless Ni plating; electroless bumping; gang bonding; inner-lead-bonded; small quantities of bumped dies; small scale production; Adhesives; Aluminum; Copper; Gold; Morphology; Nickel; Resists; Substrates; Wafer bonding; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location :
Las Vegas, NV
Type :
conf
DOI :
10.1109/ECTC.1990.122223
Filename :
122223
Link To Document :
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