Author :
Van Buskirk, Bob
Author_Institution :
RFMD Multi-market Products Group (MPG), USA
Abstract :
A talk outlining the significant attributes of GaN as the “right semiconductor technology” at the “right time” in the RF power and power management industries will be presented. The path forward as GaN matures as a mainstream semiconductor technology and parallels with the maturation and commercialization of Gallium Arsenide (GaAs) HBT technology in the 1990s will be also discussed. The potential role of GaN as a “green technology” for next generation networks and global power applications will also be highlighted.
Keywords :
Biographies; Commercialization; Companies; Energy management; Gallium arsenide; Gallium nitride; Heterojunction bipolar transistors; Next generation networking; Radio frequency; Technology management;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434086
