DocumentCode
1890968
Title
Plenary session
Author
Van Buskirk, Bob
Author_Institution
RFMD Multi-market Products Group (MPG), USA
fYear
2010
fDate
10-14 Jan. 2010
Firstpage
1
Lastpage
1
Abstract
A talk outlining the significant attributes of GaN as the “right semiconductor technology” at the “right time” in the RF power and power management industries will be presented. The path forward as GaN matures as a mainstream semiconductor technology and parallels with the maturation and commercialization of Gallium Arsenide (GaAs) HBT technology in the 1990s will be also discussed. The potential role of GaN as a “green technology” for next generation networks and global power applications will also be highlighted.
Keywords
Biographies; Commercialization; Companies; Energy management; Gallium arsenide; Gallium nitride; Heterojunction bipolar transistors; Next generation networking; Radio frequency; Technology management;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location
New Orleans, LA, USA
Print_ISBN
978-1-4244-4725-1
Electronic_ISBN
978-1-4244-4726-8
Type
conf
DOI
10.1109/RWS.2010.5434086
Filename
5434086
Link To Document