Improved physical modelling for accurate simulation of bipolar effects in thin film SOI MOSFETs

Author

Armstrong, G.A. ; French, W.D.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

fYear

1991

fDate

1-3 Oct 1991

Firstpage

46

Lastpage

47

Abstract

The significance of incorporating improved physical models for bandgap narrowing and impact ionization to accurately model the characteristics of the parasitic transistor is discussed. Accurate simulation of the bipolar breakdown of ultrathin-film SOI transistors requires the correct balance between the current gain and the impact ionization rate. The current gain is strongly dependent upon bandgap narrowing and SOI film doping. Impact ionization may be reduced, and the holding voltage increased, in ultrathin-film devices with a heavily doped film and the inclusion of an optimized LDD

Keywords

energy gap; impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; SOI film doping; bandgap narrowing; bipolar breakdown; bipolar effects simulation; current gain; heavily doped film; holding voltage; impact ionization; optimized LDD; parasitic transistor; physical modelling; thin film SOI MOSFETs; Bipolar transistors; Doping; Electric breakdown; Impact ionization; MOSFETs; Photonic band gap; Predictive models; Semiconductor process modeling; Surface fitting; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162849

Filename

162849