Title :
Body-doping considerations for high performance 0.1-μm SOI MOSFETs
Author :
Mandelman, J.A. ; Bryant, A. ; Machesney, B.J. ; Nowak, E.J.
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
Abstract :
Various factors for determining body doping for a high performance 0.1-μm SOI (silicon-on-insulator) MOSFET technology are considered. Long channel constraints on body doping and thickness for assuring full depletion are treated first. Then short channel considerations for body doping for a high performance 0.1-μm SOI MOSFET technology are summarized
Keywords :
insulated gate field effect transistors; semiconductor doping; semiconductor-insulator boundaries; 0.1 micron; SOI MOSFET technology; body doping; full depletion; long channel constraints; short channel considerations; Doping; MOSFETs; Semiconductor process modeling;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162853
