DocumentCode
1891169
Title
A rapid evaluation technique for porous silicon structures
Author
Burch, R. ; Farr, J.P.G. ; Keen, J.M. ; Stiebahl, K.C.
Author_Institution
Dept. of Chem., Reading Univ., UK
fYear
1991
fDate
1-3 Oct 1991
Firstpage
58
Lastpage
59
Abstract
Experiments designed to determine the feasibility of using field emission-SEM to characterize porous silicon (PS) are described. By modifying the anodizing conditions and the starting material type and resistivity, porous structures can be produced ranging from microporous (<2 nm) to macroporous (>20 nm). The resulting structures can then be characterized by gravimetric, BET and FE-SEM, while also investigating the limitations of BET and FE-SEM
Keywords
elemental semiconductors; field emission electron microscopy; porous materials; scanning electron microscope examination of materials; silicon; 2 to 20 nm; BET; anodizing conditions; field emission-SEM; gravimetric technique; porous Si structures; rapid evaluation technique; Chemistry; Conductivity; Information analysis; Loss measurement; Manufacturing; Metallization; Reservoirs; Silicon; Surface topography; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162855
Filename
162855
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