Polysilicon hollow beam lateral resonators

Author

Judy, Michael W. ; Howe, Roger T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1993

fDate

7-10 Feb 1993

Firstpage

265

Lastpage

271

Abstract

The first microfabrication of hollow polysilicon beams is reported. Arrays of lateral resonators are designed, processed, and tested with resonant frequencies from 8 kHz to 0.5 MHz. The quality factor as a function of pressure of the hollow beam resonators is compared with solid beam resonators, and values as high as 34000 are obtained in vacuum. The hollow beam resonators are verified with theory and compared to resonators with solid cross sections

Keywords

Q-factor; electric sensing devices; elemental semiconductors; etching; masks; micromechanical devices; photolithography; resonators; silicon; 8 kHz to 0.5 MHz; Si; anisotropic etching; elemental semiconductor; hollow beam lateral resonators; hollow polysilicon beams; microfabrication; micromechanical structures; pressure dependence; quality factor; sidewall-space technique; six-mask process; surface micromachining; Actuators; Etching; Fabrication; Laboratories; Microstructure; Optical resonators; Process design; Resonant frequency; Solids; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1993, MEMS '93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE.

Conference_Location

Fort Lauderdale, FL

Print_ISBN

0-7803-0957-X

Type

conf

DOI

10.1109/MEMSYS.1993.296911

Filename

296911