Title :
Effective mass versus tight-binding: Where is the discord?
Author :
Mera, H. ; Persson, M. ; Niquet, Y.M. ; Bescond, M.
Author_Institution :
Inst. for Nanosci. & Cryogenics, CEA, Grenoble, France
Abstract :
We address the use of the tight-binding and effective mass approximations (TB and EMA) for the calculation of transport properties in silicon nanowires (SiNWs). Three different transport scenarios are considered within a non-equilibrium Green´s function approach: ballistic transport, tunneling under a potential barrier, and transport through a potential well. In the first two cases TB and EMA provide roughly similar conductances. For the potential-well case, however, the EMA approach fails to reproduce fano resonances. These discrepancies are strongly reduced at room temperature.
Keywords :
Green´s function methods; ballistic transport; conduction bands; effective mass; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; tight-binding calculations; tunnelling; Si; ballistic transport; effective mass approximation; nonequilibrium Green´s function; potential barrier; potential well; silicon nanowires; temperature 293 K to 298 K; tight-binding approximation; transport properties; tunneling; Effective mass; Nanowires; Scattering; Silicon; Temperature; Tensile stress; Transistors; Green´s function; Landauer; effective mass; nanowire; quantum transport; tight-binding;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677923