• DocumentCode
    1891433
  • Title

    Point defect scattering in silicon nanowires

  • Author

    Pecchia, Alessandro ; Penazzi, Gabriele ; Carlo, Aldo Di

  • Author_Institution
    ISMN, CNR, Rome, Italy
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A semi-empirical tight-binding Hamiltonian based on density functional theory is used to study scattering of defects in H-passivated (110)SiNWs. The effect of surface dangling bonds and the presence of oxygen on the coherent transport is considered. The scattering at Si vacancies is also studied.
  • Keywords
    density functional theory; elemental semiconductors; nanowires; point defect scattering; silicon; tight-binding calculations; vacancies (crystal); Si; density functional theory; passivation; point defect scattering; semi-empirical tight-binding Hamiltonian; silicon nanowires; vacancies; Doping; Electric potential; Geometry; Nanowires; Scattering; Silicon; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677928
  • Filename
    5677928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1891433