Title :
Point defect scattering in silicon nanowires
Author :
Pecchia, Alessandro ; Penazzi, Gabriele ; Carlo, Aldo Di
Author_Institution :
ISMN, CNR, Rome, Italy
Abstract :
A semi-empirical tight-binding Hamiltonian based on density functional theory is used to study scattering of defects in H-passivated (110)SiNWs. The effect of surface dangling bonds and the presence of oxygen on the coherent transport is considered. The scattering at Si vacancies is also studied.
Keywords :
density functional theory; elemental semiconductors; nanowires; point defect scattering; silicon; tight-binding calculations; vacancies (crystal); Si; density functional theory; passivation; point defect scattering; semi-empirical tight-binding Hamiltonian; silicon nanowires; vacancies; Doping; Electric potential; Geometry; Nanowires; Scattering; Silicon; Wire;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677928
