DocumentCode :
1891528
Title :
A percolative approach to transport and excess noise in polyacene semiconductors
Author :
Pennetta, C. ; Carbone, A. ; Tizzoni, M. ; Reggiani, L.
Author_Institution :
Dipt. di Ing. dell´´Innovazione, Univ. del Salento, Turin, Italy
fYear :
2010
fDate :
26-29 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
Electrical transport measurements performed in polyacene thin films as a function of the applied voltage, pointed out the existence of a sharp peak in the relative spectral density of current noise occurring at voltages corresponding to the region of crossover between the Ohmic regime and the space charge limited current regime. Recently we have proposed an explanation of these experimental findings in terms of noise due to trapping and detrapping processes of the injected carriers by deep traps. This interpretation was carried out by adopting a phenomenological model making use of the measured current-voltage characteristics. To check this interpretation we have developed a new percolation model which will be discussed here.
Keywords :
organic semiconductors; percolation; semiconductor thin films; Ohmic regime; current-voltage characteristics; detrapping process; electrical transport noise; excess noise; percolative approach; polyacene semiconductor; polyacene thin film; relative spectral density; Current measurement; Noise; Numerical models; Resistance; Resistors; Semiconductor device measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
Type :
conf
DOI :
10.1109/IWCE.2010.5677931
Filename :
5677931
Link To Document :
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