Title :
On the role of line-edge roughness on the diffusion and localization in GNRs
Author :
Pourfath, M. ; Yazdanpanah, A. ; Fathipour, M. ; Kosina, H.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
In this work a comprehensive study of the effect of line-edge roughness on the electronic properties of graphene nanoribbons is presented. The effect of roughness parameters and the role of device geometry is discussed. Depending on these parameters, carrier transport can be in the quasi ballistic, diffusive, or localization regime. Our results show the transport gap of nanoribbons can increase due to the presence of line-edge roughness.
Keywords :
Green´s function methods; ballistic transport; carrier mobility; diffusion; graphene; localised states; nanostructured materials; surface roughness; tight-binding calculations; C; carrier transport; device geometry; diffusion; diffusive transport; electronic properties; graphene nanoribbons; line-edge roughness; localization regime; nanoribbon transport gap; quasiballistic transport; roughness parameter effect; Carbon; Carbon nanotubes; Correlation; Green´s function methods; Numerical models; Scattering; Transistors;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677936
