Model-comparison study of quasi-ballistic electron transport in nanoscale semiconductor devices

Author

Tang, Ting-wei ; Yoon, Il-o ; Sano, Nobuyuki ; Jin, Seonghoon ; Fischetti, Massimo V. ; Park, Young June

Author_Institution

Univ. of Mass., Amherst, MA, USA

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We compare two relaxation time approximation (RTA) models of the 1-D Boltzmann transport equation, one of Sano and the other of Gnani et ah. Using an asymmetric parabola to approximate the potential-energy profile, we determine semi-analytically the distribution function at the virtual source (VS). We consider three different forms of energy dependence of the relaxation time (RT). The backscattering coefficient and ballistic efficiency are calculated and compared for each RTA model. We find that the VS model is strictly applicable only to the case of a constant mean-free-path.

Keywords

Boltzmann equation; ballistic transport; carrier relaxation time; electron transport theory; nanoelectronics; semiconductor device models; 1D Boltzmann transport equation; RTA model; asymmetric parabola; backscattering coefficient; ballistic efficiency; energy dependence; mean-free-path; nanoscale semiconductor device; potential energy; quasiballistic electron transport; relaxation time approximation; virtual source; Approximation methods; Backscatter; MOSFETs; Mathematical model; Scattering; Shape; Boltzmann transport equation; backscattering coefficient; ballistic efficiency; critical length; relaxation time approximation; virtual source;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677940

Filename

5677940