Title :
A transistor-based high-order analog predistorter with memory correction for WCDMA applications
Author :
Lee, Yong-Sub ; Lee, Mun-Woo ; Kam, Sang-Ho ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
A transistor-based high-order analog predistorter (APD) with memory correction for wide-band code division multiple access (WCDMA) applications is reported. The transistor-based third-order intermodulation (IM3) generator employs the nonlinearity of the low-power gain amplifier with a low VCC. The diode-based fifth-order intermodulation (IM5) generator uses the nonlinearity of the anti-parallel connected Schottky diodes. Therefore, the proposed APD with various delay differences on each nonlinear paths cancels the IM3s and IM5s by compensating for memory effects of the power amplifier (PA), respectively. For the validations, the proposed APD is constructed with 90-W class-AB PA and tested using a two-tone signal with 2-MHz tone spacing and a three-carrier WCDMA signal at 2.14 GHz. Form the measured results, the proposed fifth-order APD shows the significant IM3 and IM5 cancellation and the notable adjacent channel leakage ratio improvement.
Keywords :
Schottky diodes; code division multiple access; distortion; intermodulation; power amplifiers; power transistors; wavelength division multiplexing; anti-parallel connected Schottky diodes; diode-based fifth-order intermodulation generator; frequency 2.14 GHz; low-power gain amplifier; memory correction; power 90 W; power amplifiers; three-carrier WCDMA signal; transistor-based high-order analog predistorter; transistor-based third-order intermodulation; wide-band code division multiple access; Broadband amplifiers; Delay effects; Delay lines; Linearity; Multiaccess communication; OFDM modulation; Power amplifiers; Schottky diodes; Testing; Wideband; Analog predistorter (APD); WCDMA; delay lines; memory effect; power amplifiers;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434119