Title :
Handshaking multiscale thermal model of nanostructured devices
Author :
Romano, Giuseppe ; Der Maur, Matthias Auf ; Di Carlo, Aldo ; Pecchia, Alessandro
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome "Tor Vergata", Rome, Italy
Abstract :
In this work we present a multiscale method to model self-heating effects in nanostructured devices. While the heating is modeled within the drift-diffusion approximation, the heat dissipation is computed by means of a concurrent coupling between a Phonon Boltzmann Transport Equation (PBTE) based method and the Fourier model. We develop the way to connect the two models to each other and apply the implemented scheme to a GaN based High Electron Mobility Transistor (HEMT).
Keywords :
Boltzmann equation; III-V semiconductors; cooling; gallium compounds; high electron mobility transistors; nanoelectronics; semiconductor device models; wide band gap semiconductors; Fourier model; GaN; drift-diffusion approximation; handshaking multiscale thermal model; heat dissipation; high electron mobility transistor; nanostructured devices; phonon Boltzmann transport equation; self-heating effects; Computational modeling; HEMTs; Heating; Mathematical model; Phonons; Semiconductor process modeling; Temperature measurement;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677942
