Handshaking multiscale thermal model of nanostructured devices

Author

Romano, Giuseppe ; Der Maur, Matthias Auf ; Di Carlo, Aldo ; Pecchia, Alessandro

Author_Institution

Dept. of Electron. Eng., Univ. of Rome "Tor Vergata", Rome, Italy

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this work we present a multiscale method to model self-heating effects in nanostructured devices. While the heating is modeled within the drift-diffusion approximation, the heat dissipation is computed by means of a concurrent coupling between a Phonon Boltzmann Transport Equation (PBTE) based method and the Fourier model. We develop the way to connect the two models to each other and apply the implemented scheme to a GaN based High Electron Mobility Transistor (HEMT).

Keywords

Boltzmann equation; III-V semiconductors; cooling; gallium compounds; high electron mobility transistors; nanoelectronics; semiconductor device models; wide band gap semiconductors; Fourier model; GaN; drift-diffusion approximation; handshaking multiscale thermal model; heat dissipation; high electron mobility transistor; nanostructured devices; phonon Boltzmann transport equation; self-heating effects; Computational modeling; HEMTs; Heating; Mathematical model; Phonons; Semiconductor process modeling; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677942

Filename

5677942