Simulations of complex nuclear events from high energy ion tracks in integrated circuits with 3D NanoTCAD

We present a newly developed approach in Technology Computer Aided Design (TCAD) and circuit-device (mixed-mode) tools for automated simulations of nanoscale complex nuclear event effects from high energy ion tracks in integrated circuits for this multiscale problem. The approach includes automatic building of 3D models from integrated circuit layouts (GDSII), and generating and adaptation of computational mesh to fine nanoscale features of multi-branched high energy ion tracks produced by Vanderbilt University MRED/Geant4 package. Generation and parallel simulation of hundreds (or thousands) of events is automated with minimal user intervention. This approach allows significant increase in computation efficiency.