SCREAM I: A single mask, single-crystal silicon process for microelectromechanical structures

Author

Shaw, Kevin A. ; Zhang, Z. Lisa ; MacDonald, Noel C.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1993

fDate

7-10 Feb 1993

Firstpage

155

Lastpage

160

Abstract

A process outline for a one-mask version of the single-crystal silicon reactive etch and metal (SCREAM) process called SCREAM-I, for fabricating silicon microelectromechanical (MEM) devices, is presented. The process defines single-crystal silicon (SCS) high-aspect ratio beams using submicron optical lithography. The process defines MEM devices with a single mask, including contact pads, interconnects, released beams, and lateral capacitors. SCREAM 1 is a self-aligned, low-temperature (<300°C) process that can be completed in ≈6-8 hr. All fabrication steps rely on industry standard, high-throughput fabrication tools. Beam elements 0.5 μm to 5 μm in width can be fabricated with aspect ratios of greater than 10 to 1

Keywords

integrated circuit technology; masks; micromechanical devices; photolithography; sputter etching; 0.5 to 5 micron; RIE; SCREAM-I; Si; bulk micromachining; contact pads; elemental semiconductor; high-aspect ratio beams; interconnects; lateral capacitors; low-temperature; microelectromechanical structures; reactive etch and metal process; released beams; self-aligned; single crystal Si; single mask; submicron optical lithography; Chemical technology; Chemistry; Etching; Lithography; Micromachining; Optical beams; Optical device fabrication; Plasma temperature; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1993, MEMS '93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE.

Conference_Location

Fort Lauderdale, FL

Print_ISBN

0-7803-0957-X

Type

conf

DOI

10.1109/MEMSYS.1993.296930

Filename

296930