Three-dimensional k·p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity

Author

Pons, N. ; Cavassilas, N. ; Bescond, M. ; Michelini, F. ; Raymond, L. ; Lannoo, M.

Author_Institution

IM2NP, CNRS, Marseille, France

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowire field effect transistor. The model is based on a six-band k·p Hamiltonian expressed within the non-equilibrium Green´s function formalism. Based on this simulator we have studied the influence of a single donor and acceptor dopant on the transport properties. Numerical calculations show that an acceptor impurity induces both resonant and anti-resonant interferences which degrade the transistor performances.

Keywords

Green´s function methods; MOSFET; doping; k.p calculations; nanowires; semiconductor device models; 3D k·p quantum simulations; acceptor dopant; acceptor impurity; anti-resonant interferences; donor dopant; ionized impurity; nonequilibrium Green function formalism; p-type nanowire MOS transistors; p-type nanowire field effect transistor; six-band k·p Hamiltonian; FETs; Impurities; Semiconductor process modeling; Silicon; Solid modeling; Three dimensional displays; acceptor; hole; impurity; k·p method; nanowire; quantum; resonant interferences; transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677947

Filename

5677947