• DocumentCode
    1891957
  • Title

    Phonon-induced transverse-mode coupling in double-gate transistor

  • Author

    Cavassilas, N. ; Bescond, M. ; Michelini, F.

  • Author_Institution
    Ultimate Silicon Devices Dept., IM2NP, Marseille, France
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work we present a quantum transport model considering the electron-phonon scattering within the Non-Equilibrium Green Function formalism. The model which explicitly considers transverse mode coupling is applied to study the electronic transport in double-gate transistors. Original underlying behaviors due to transverse-mode coupling related to phonon are then reported.
  • Keywords
    Green´s function methods; MOSFET; electrical conductivity; electron-phonon interactions; phonons; double-gate transistor; electron-phonon scattering; electronic transport; nonequilibrium Green´s Function Formalism; phonon-induced transverse-mode coupling; quantum transport model; Couplings; Electron optics; Logic gates; Optical scattering; Phonons; Transistors; double-gate transistors; electron-phonon scattering; quantum transport;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677951
  • Filename
    5677951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1891957