Study of FOXFET biasing structure [microstrip detectors]

Author

Vrtacnik, D. ; Resnik, D. ; Ajancic, U. ; Mozek, M. ; Cvar, M. ; Amon, S.

Author_Institution

Fac. of Electr. Eng., Ljubljana Univ., Slovenia

fYear

2002

fDate

2002

Firstpage

300

Lastpage

304

Abstract

The FOXFET biasing structure of silicon microstrip detectors is studied. The influence of oxide charge, gate voltage and applied voltage on the distribution of electrical carriers and electrical potential is analyzed by numerical simulation. We have shown that the current of holes flowing in the channel from floating source to drain is displaced from the channel surface in such a way that it surrounds the accumulation region. We have also shown that strip voltage should be efficiently controlled by fixed oxide charge and/or by gate voltage.

Keywords

accumulation layers; carrier density; dielectric thin films; electric sensing devices; elemental semiconductors; field effect transistors; microstrip components; numerical analysis; semiconductor device models; silicon; FOXFET biasing structure; Si; accumulation region; applied voltage; channel surface; electrical carrier distribution; electrical potential; fixed oxide charge; floating source-drain current; gate voltage; hole current; numerical simulation; oxide charge; silicon microstrip detector; strip voltage; Back; Detectors; Electric potential; FETs; Medical simulation; Microstrip; Resistors; Silicon; Strips; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2002. MELECON 2002. 11th Mediterranean

Print_ISBN

0-7803-7527-0

Type

conf

DOI

10.1109/MELECON.2002.1014578

Filename

1014578