Title :
Study of FOXFET biasing structure [microstrip detectors]
Author :
Vrtacnik, D. ; Resnik, D. ; Ajancic, U. ; Mozek, M. ; Cvar, M. ; Amon, S.
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Abstract :
The FOXFET biasing structure of silicon microstrip detectors is studied. The influence of oxide charge, gate voltage and applied voltage on the distribution of electrical carriers and electrical potential is analyzed by numerical simulation. We have shown that the current of holes flowing in the channel from floating source to drain is displaced from the channel surface in such a way that it surrounds the accumulation region. We have also shown that strip voltage should be efficiently controlled by fixed oxide charge and/or by gate voltage.
Keywords :
accumulation layers; carrier density; dielectric thin films; electric sensing devices; elemental semiconductors; field effect transistors; microstrip components; numerical analysis; semiconductor device models; silicon; FOXFET biasing structure; Si; accumulation region; applied voltage; channel surface; electrical carrier distribution; electrical potential; fixed oxide charge; floating source-drain current; gate voltage; hole current; numerical simulation; oxide charge; silicon microstrip detector; strip voltage; Back; Detectors; Electric potential; FETs; Medical simulation; Microstrip; Resistors; Silicon; Strips; Voltage;
Conference_Titel :
Electrotechnical Conference, 2002. MELECON 2002. 11th Mediterranean
Print_ISBN :
0-7803-7527-0
DOI :
10.1109/MELECON.2002.1014578
