Device and electromagnetic co-simulation of TSV: Substrate noise study and compact modeling of a TSV in a matrix

Author

Le Maitre, Patrick ; Brocard, Melanie ; Farcy, Alexis ; Marin, Jean-Claude

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

19-21 March 2012

Firstpage

404

Lastpage

411

Abstract

This paper presents the results obtained from the simulation of TSV structures in face-to-back stacked dice. A novel simulation tool enabling device and electromagnetic (EM) co-simulation is used. We introduce a method to extract, from S-parameter simulation, a physics-based compact model of the TSV in a matrix and study the impact of layout variations on the TSV equivalent electrical model.

Keywords

S-parameters; circuit simulation; integrated circuit modelling; integrated circuit noise; technology CAD (electronics); three-dimensional integrated circuits; EM cosimulation; S-parameter simulation; TCAD; TSV structure; compact modeling; electrical model; electromagnetic cosimulation; face-to-back stacked dice; layout variation; physics-based compact model; simulation tool; substrate noise; Capacitance; Integrated circuit modeling; Mathematical model; Plugs; Solid modeling; Substrates; Through-silicon vias; 28nm; 3D; TCAD; TSV; Wide 10; device; electromagnetic; face-to-back; interconnects; modeling; simulation; substrate noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ISQED), 2012 13th International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1948-3287

Print_ISBN

978-1-4673-1034-5

Type

conf

DOI

10.1109/ISQED.2012.6187525

Filename

6187525