Subband representation in atomistic transport simulation of nanowire transistors

We construct a low-dimensional representation of a tight-binding model to be used in the self-consistent device simulation. The method combines the original atomic orbitals of the nanowire device into a small basis set which reproduces the band structure and all the relevant electronic states. The basis representation greatly reduces the numerical burden and makes it possible to incorporate non-elastic scattering into atomistic transport simulations.