DocumentCode :
1892376
Title :
Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application
Author :
Doi, H. ; Iguchi, Y. ; Kimura, H. ; Iwasaki, T. ; Mirua, Y. ; Yokogawa, M.
Author_Institution :
Epi Solution Division
fYear :
2002
fDate :
2002
Keywords :
Costs; Dark current; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Manufacturing; Optical microscopy; Research and development; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014588
Filename :
1014588
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1892376
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