Title :
Monte Carlo study of transport properties in junctionless transistors
Author :
Vitale, Wolfgang ; Mohamed, Mohamed ; Ravaioli, Umberto
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
This paper applies the Monte Carlo method to study junctionless transistors in order to define trade-offs in the configuration of the channel and compare the results with conventional MOS transistors.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; transport processes; MOS transistor; Monte Carlo method; channel; junctionless transistor; transport property; Doping; Energy barrier; Junctions; Logic gates; Monte Carlo methods; Silicon; Transistors; Junctionless transistors; Monte Carlo; nanoscale; phonons; short-channel effects; transport;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677969
