Performance of a discontinuous Galerkin solver for semiconductor boltzmann equations

Author

Cheng, Yingda ; Irene, M.G. ; Majorana, Armando ; Shu, Chi-Wang

Author_Institution

Dept. of Math., Univ. of Texas at Austin, Austin, TX, USA

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We present the effectiveness and competitiveness of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. In particular, we show that the scheme can maintain reasonable accuracy even with rather coarse meshes, hence providing a good alternative to the traditional DSMC solvers. Comparative studies for one-dimensional devices and simulations on a 2D double gate MOSFET are provided.

Keywords

Boltzmann equation; Galerkin method; MOSFET; Poisson equation; electron transport theory; 2D double gate MOSFET; BP system; Boltzmann-Poisson system; DSMC solvers; coarse meshes; deterministic computations; discontinuous Galerkin solver; electron transport; one-dimensional devices; semiconductor Boltzmann equations; semiconductor devices; Computational modeling; Logic gates; MOSFET circuits; Mathematical model; Moment methods; Semiconductor devices; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677973

Filename

5677973