Title :
SPICE simulation of thin-film SOI IGFETs using the BSIM2 model
Author :
Tipton, C. Wesley ; Peckerar, Martin
Abstract :
The Berkeley short-channel IGFET (insulated-gate field effect transistor) model (BSIM2) has been successfully used to simulate the operation of fully depleted SOI (silicon-on-insulator) IGFETs. By modifying existing BSIM2 parameter extraction algorithms to account for the characteristics of thin-film transistors, good agreement has been obtained between the measured and simulated performances of a wide variety of these devices
Keywords :
Circuit simulation; Design automation; Laboratories; Optimization methods; Parameter extraction; SPICE; Software packages; Solid modeling; Thin film circuits; Transistors;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162860
