Computational study of InAs/GaAs quantum dot arrays

Author

Gómez-Campos, F.M. ; Rodríguez-Bolívar, S. ; Luque-Rodríguez, A. ; López-Villanueva, J.A. ; Carceller, J.E.

Author_Institution

Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrodinger equation associated with these structures, using a set of 13 × 13 × 13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different effective masses in each material in our calculations. The effects of the strain were included by taking a conduction band offset of 0.5 eV, corresponding to strained InAs in GaAs.

Keywords

III-V semiconductors; Schrodinger equation; absorption coefficients; conduction bands; effective mass; gallium arsenide; indium compounds; semiconductor quantum dots; InAs-GaAs; Q space; Schrodinger equation; conduction band offset; cubic quantum dot systems; effective mass; minibands; photon absorption coefficient; semiconductor quantum dot arrays; strained InAs; Absorption; Gallium arsenide; Nanostructures; Optical polarization; Photonics; Quantum dots; Quantum dot; miniband structure; ordered nanostructures; photon absorption coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677976

Filename

5677976