Process technologies for the integration of high density phase change RAM

Author

Jeong, G.T. ; Hwang, Y.N. ; Lee, S.-H. ; Lee, S.Y. ; Ryoo, K.C. ; Park, J.H. ; Song, Y.J. ; Ahn, S.J. ; Jeong, C.W. ; Kim, Y.T. ; Horii, H. ; Ha, Y.H. ; Koh, G.W. ; Jeong, H.S. ; Kinam Kim

Author_Institution

Adv. Technol. Dev. Team, Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea

fYear

2005

fDate

9-11 May 2005

Firstpage

19

Lastpage

22

Abstract

Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write/read speed and reliability. The process technologies for the integration of high density PRAM are reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current are reviewed and other key factors for the high density PRAM are discussed.

Keywords

phase change materials; random-access storage; PRAM; high density phase change RAM; memory reliability; memory scalability; process technologies; write/read speed; writing current reduction; Computer aided engineering; Costs; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Redundancy; Scalability; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Print_ISBN

0-7803-9081-4

Type

conf

DOI

10.1109/ICICDT.2005.1502579

Filename

1502579