• DocumentCode
    1892669
  • Title

    Interface optical phonon modes in wurtzite quantum heterostructures

  • Author

    Liao, S. ; Dutta, M. ; Stroscio, M.A.

  • Author_Institution
    Univ. of Illinois at Chicago, Chicago, IL, USA
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper formulated the interface optical phonon modes for two particular asymmetrical heterostructures: SiC/GaN/Vacuum and AIN/GaN/Vacuum. The interface optical phonon potentials and dispersion relations are determined for these structures. Using these results, the carrier-interface-phonon interaction Hamiltonian is formulated.
  • Keywords
    III-V semiconductors; aluminium compounds; dispersion relations; gallium compounds; interface phonons; silicon compounds; wide band gap semiconductors; Al-GaN; SiC-GaN; carrier-interface-phonon interaction Hamiltonian; dispersion relations; interface optical phonon modes; wurtzite quantum heterostructures; Dispersion; Electric potential; Gallium nitride; Materials; Optical scattering; Phonons; Silicon carbide; carrier-phonon interaction; heterostructure; interface phonons; wurtzite;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677978
  • Filename
    5677978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1892669