Title :
Interface optical phonon modes in wurtzite quantum heterostructures
Author :
Liao, S. ; Dutta, M. ; Stroscio, M.A.
Author_Institution :
Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
This paper formulated the interface optical phonon modes for two particular asymmetrical heterostructures: SiC/GaN/Vacuum and AIN/GaN/Vacuum. The interface optical phonon potentials and dispersion relations are determined for these structures. Using these results, the carrier-interface-phonon interaction Hamiltonian is formulated.
Keywords :
III-V semiconductors; aluminium compounds; dispersion relations; gallium compounds; interface phonons; silicon compounds; wide band gap semiconductors; Al-GaN; SiC-GaN; carrier-interface-phonon interaction Hamiltonian; dispersion relations; interface optical phonon modes; wurtzite quantum heterostructures; Dispersion; Electric potential; Gallium nitride; Materials; Optical scattering; Phonons; Silicon carbide; carrier-phonon interaction; heterostructure; interface phonons; wurtzite;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677978
