Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Author

Guan, Ximeng ; Huang, Shengxi ; Kang, Jiahao ; Zhang, Jinyu ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green´s Function (NEGF) approach using Extended Hiickel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high I_on/I_off ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.

Keywords

Green´s function methods; field effect transistors; low-power electronics; nanostructured materials; nanotechnology; semiconductor doping; sensitivity analysis; tunnelling; EHT-based Hamiltonian; EHT-based NEGF simulation; GNR tunneling-FET; bandgap; design optimization; extended Hiickel theory; graphene nanoribbon tunneling-FET; low voltage operation; low-power circuit; nonequilibrium Green function; performance sensitivity; source-drain doping; Doping; Logic gates; Materials; Performance evaluation; Photonic band gap; Switches; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677982

Filename

5677982