DocumentCode :
1892921
Title :
Theory of high field transport and impact ionization in III-Nitride semiconductors
Author :
Bellotti, Enrico ; Moresco, Michele ; Bertazzi, Francesco
Author_Institution :
ECE Dept., Boston Univ., Boston, MA, USA
fYear :
2010
fDate :
26-29 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
High field electron and hole transport in wurtzite phase GaN is studied using an ensemble Monte Carlo method. The model includes the details of the full band structure derived from nonlocal empirical pseu-dopotential calculations. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion approximation using ab initio techniques to determine the phonon dispersion relation. The impact ionization transition rate is computed based on the calculated electronic structure and the corresponding wave-vector dependent dielectric function. The complex band structure of wurtzite GaN requires the inclusion of band-to-band tunnelling effects that are critical at high electric fields. The electric-field-induced interband transitions are investigated by the direct solution of the time-dependent multiband Schroedinger equation. The multiband description of the transport predicts a considerable increase of the impact ionization coefficients compared to the case in which tunnelling is not considered.
Keywords :
III-V semiconductors; Monte Carlo methods; Schrodinger equation; ab initio calculations; band structure; dielectric function; electron-phonon interactions; electronic structure; gallium compounds; impact ionisation; phonon dispersion relations; pseudopotential methods; tunnelling; wide band gap semiconductors; GaN; III-nitride semiconductors; ab initio techniques; band-to-band tunnelling effects; complex band structure; direct solution; electric-field-induced interband transitions; electronic structure; ensemble Monte Carlo method; full band structure; high electric fields; high field electron transport; high field hole transport; impact ionization coefficients; impact ionization transition rate; multiband description; nonlocal empirical pseudopotential calculations; nonpolar carrier-phonon interaction; phonon dispersion relation; rigid pseudoion approximation; time-dependent multiband Schroedinger equation; wave-vector dependent dielectric function; wurtzite phase GaN; Avalanche photodiodes; Charge carrier processes; Gallium nitride; Impact ionization; Phonons; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
Type :
conf
DOI :
10.1109/IWCE.2010.5677987
Filename :
5677987
Link To Document :
بازگشت