InGaAs PIN detectors for frequencies above 100 GHz

Author

Agethen, M. ; Keiper, D. ; Janssen, G. ; Brennemann, A. ; Velling, P. ; van den Berg, C. ; Bertenburg, R.M.

Author_Institution

Innovative Process. AG, Duisburg, Germany

fYear

2002

fDate

2002

Firstpage

673

Lastpage

676

Abstract

High-frequency vertical PIN detectors with highly p-type doped InGaAs basis layer were investigated. Reducing the PIN area and series resistance together with the thickness of the undoped drift region results in f3dB corner frequencies of up to 120 GHz. In addition, the vertical PIN concept reveals several advantages compared to waveguide PINs like the possibility to build two dimensional detector arrays and it is perfectly suited for monolithically integrated opto-electronic receiver ICs (OEIC). Further PIN and OEIC results will be presented.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 100 to 120 GHz; InGaAs; OEIC; PIN area; monolithically integrated opto-electronic receiver ICs; series resistance; two dimensional detector arrays; undoped drift region; vertical PIN detectors; Bandwidth; Detectors; Diodes; Frequency; Indium gallium arsenide; Integrated optoelectronics; Optoelectronic devices; Page description languages; Pins; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014607

Filename

1014607